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Mitsubishi RD16HHF1 LDMOS model
Under construction...
The Mitsubishi RD16HHF1 is a medium power LDMOS often used to build small amplifiers for amateur radio, either as a driver for a bigger device or standalone for lower output power.
Model for Vdd=12.5 V and Idd= 500 mA
Typical S-parameters for this device can be found on the Mitsubishi web site, for a supply voltage of 12.5 V and a drain current of 500 mA.
Using the extraction method previously described, considering only the S-parameters from 50 MHz to 500 MHz, the following small-signal model parameters are determined:
Rg = 0.987 ohm Rd = 0.832 ohm Rs = 0.111 ohm Lg = 3.28 nH Ld = 2.60 nH Ls = 0.863 nH Cgs = 43.5 pF Cds = 31.9 pF Cgd = 2.38 pF gm = 0.639 S gds = 0.525 mSSo the equivalent small-signal circuit for this LDMOS at 500 mA drain current is the following:
Smith chart with measured vs. model S-parameters:
S-parameters fitting details - fitted region is in white background:
Model for Vdd=12.5 V and Idd= 800 mA
The device datasheet contains also a table of S-parameters for Vdd=12.5 V and Idd=800 mA.
Rg = 1.08 ohm Rd = 0.808 ohm Rs = 0.103 ohm Lg = 3.30 nH Ld = 2.64 nH Ls = 0.872 nH Cgs = 44.3 pF Cds = 32.1 pF Cgd = 2.44 pF gm = 0.692 S gds = 1.58 mS
Smith chart with measured vs. model S-parameters:
S-parameters fitting details - fitted region is in white background:
