SUBELEMENT E6 -- CIRCUIT COMPONENTS [5 Exam Questions -- 5 Groups]
E6A Semiconductor material: Germanium,
Silicon, P-type, N-type;
Transistor types: NPN, PNP, junction, unijunction, power; field-effect
transistors (FETs): enhancement mode; depletion mode; MOS; CMOS; N-
channel; P-channel
E6A01
(C)
In what
application is gallium arsenide used as a semiconductor material in preference
to germanium or silicon?
A. In bipolar transistors
B. In high-power circuits
C. At microwave frequencies
D. At very low frequencies
E6A02
(A)
What
type of semiconductor material contains more free electrons than pure germanium
or silicon crystals?
A. N-type
B. P-type
C. Bipolar
D. Insulated gate
E6A03
(D)
What
type of semiconductor material might be produced by adding some indium atoms to
germanium crystals?
A. J-type
B. MOS-type
C. N-type
D. P-type
E6A04
(C)
What
are the majority charge carriers in P-type semiconductor material?
A. Free neutrons
B. Free protons
C. Holes
D. Free electrons
E6A05
(C)
What is
the name given to an impurity atom that adds holes to a semiconductor crystal
structure?
A. Insulator impurity
B. N-type impurity
C. Acceptor impurity
D. Donor impurity
E6A06
(C)
What is
the alpha of a bipolar transistor?
A. The change of collector current with respect
to base current
B. The change of base current with respect to
collector current
C. The change of collector
current with respect to emitter current
D. The change of collector current with respect
to gate current
E6A07
(A)
In
Figure A6-2, what is the schematic symbol for a PNP transistor?
A. 1
B. 2
C. 4
D. 5
E6A08
(D)
What
term indicates the frequency at which a transistor grounded base current gain
has decreased to 0.7 of the gain obtainable at 1 kHz?
A. Corner frequency
B. Alpha rejection frequency
C. Beta cutoff frequency
D. Alpha cutoff frequency
E6A09
(D)
In
Figure A6-2, what is the schematic symbol for a unijunction transistor?
A. 3
B. 4
C. 5
D. 6
E6A10
(C)
What
are the elements of a unijunction transistor?
A. Gate, base 1 and base 2
B. Gate, cathode and anode
C. Base 1, base 2 and
emitter
D. Gate, source and sink
E6A11
(D)
What is
an enhancement-mode FET?
A. An FET with a channel that blocks voltage
through the gate
B. An FET with a channel that allows a current
when the gate voltage is zero
C. An FET without a channel to hinder current
through the gate
D. An FET without a channel;
no current occurs with zero gate voltage
E6A12
(A)
What is
a depletion-mode FET?
A. An FET that has a channel
with no gate voltage applied; a current flows with zero gate voltage
B. An FET that has a channel that blocks
current when the gate voltage is zero
C. An FET without a channel; no current flows
with zero gate voltage
D. An FET without a channel to hinder current
through the gate
E6A13
(B)
In
Figure E6-1, what is the schematic symbol for an N-channel dual-gate MOSFET?
A. 2
B. 4
C. 5
D. 6
E6A14
(A)
In
Figure E6-1, what is the schematic symbol for a P-channel junction FET?
A. 1
B. 2
C. 3
D. 6
E6A15
(D)
Why do
many MOSFET devices have built-in gate-protective Zener diodes?
A. To provide a voltage reference for the
correct amount of reverse- bias gate voltage
B. To protect the substrate from excessive
voltages
C. To keep the gate voltage within
specifications and prevent the device from overheating
D. To prevent the gate
insulation from being punctured by small static charges or excessive voltages
E6A16
(C)
What do
the initials CMOS stand for?
A. Common mode oscillating system
B. Complementary mica-oxide silicon
C. Complementary metal-oxide
semiconductor
D. Complementary metal-oxide substrate
E6A17
(C)
How
does the input impedance of a field-effect transistor compare with that of a
bipolar transistor?
A. They cannot be compared without first
knowing the supply voltage
B. An FET has low input impedance; a bipolar
transistor has high input impedance
C. An FET has high input
impedance; a bipolar transistor has low input impedance
D. The input impedance of FETs and bipolar
transistors is the same