RE: [SI-LIST] : Proposal: Rs correlation/collaboration for W-Elem

Mellitz, Richard (richard.mellitz@intel.com)
Wed, 4 Aug 1999 06:48:57 -0700

Very good point about roughness. I wonder if some these EM modeling =
tools
could incorporate this?=20

Richard Mellitz,
Intel

-----Original Message-----
From: John, Hans-Joerg
[mailto:Hans-Joerg.John@pdb.siemens.de]
Sent: Wednesday, August 04, 1999 3:21 AM
To: 'si-list@silab.eng.sun.com'
Subject: AW: [SI-LIST] : Proposal: Rs
correlation/collaboration for W-Elem ents

Hello Vadim,

in ANSI/IPC-MF-150F (Metal Foil for Printed Wiring
Applications) you find
information regarding the foil profile. There are three
types: Standard, Low
Profile and Very Low Profile. In paragraph 3.4.5 of this
standard numbers
are given for the different types:

Low Profile: < 10.2 micron
Very Low Profile: < 5.1 micron

For the Standard type no values are specified!

Additional you can find the resistivity of the copper foil
as a function of
the thickness!! This results from the different influence of
the profile for
my opinion.

Best regards

Hans-Joerg

---------------------------------------------------
Dr.-Ing. Hans-Joerg John phone: +49 5251 820 347=09
Siemens AG fax: +49 5251 820 349

ICP CS PS DH4 =09
EMC and Signal Integrity Design Support
mailto:hans-joerg.john@pdb.siemens.de

Heinz-Nixdorf-Ring 1 =09
D-33106 Paderborn
Germany

> -----Urspr=FCngliche Nachricht-----
> Von: Heyfitch, Vadim [SMTP:vadim.heyfitch@intel.com]
> Gesendet am: Mittwoch, 4. August 1999 03:58
> An: 'si-list@silab.eng.sun.com'
> Betreff: RE: [SI-LIST] : Proposal: Rs
correlation/collaboration for
> W-Elem ents
>=20
>=20
> Such measurements should allow us to nail down the
surface roughness
> parameter that is required by field solvers. Rs is rather
sensitive to
> this
> parameter making it into a good fudge factor. (At 1GHz,
skin depth is
> about
> 2 micron. Does anyone know how this compares to typical Cu
etch
> roughness?)
>=20
> Vadim
>=20
>=20

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