Re: [SI-LIST] : Idsat variation

Mike Degerstrom (degerstrom.michael@mayo.edu)
Fri, 20 Aug 1999 16:36:22 -0500

Jim,

Thanks for your reply. I'm no device physicist but I don't
think Idsat should be a function of voltage. Certainly voltage
variation affects a CMOS buffer drive strength. However
I was asking for Idsat for the following equation relating drain current
to the gate-to-source voltage for a CMOS device in the ohmic region:

ID=IDsat(VGS-VT)^2

Also, I haven't been able to find the relationship between Idsat
and temperature in my text books.

BTW, for anyone else that wants to contribute - please don't
supply PROPRIETARY information that you have from foundrys that
you work with.

Mike

> HI Mike,
>
> You can expect a 4:1 variation over Process,voltage, and temperature for
3 sigma process models.
>
> Jim Freeman
>
>
> Mike Degerstrom wrote:
>
> > Can anyone tell me what reasonable Idsat variations one could
> > expect from a typical CMOS line? Could you please qualify your
> > answers such as "these are +/- 3 sigma numbers" if at all possible?
> >
> > Mike

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