RE: [SI-LIST] : inductance extracted by ansoft SI3D

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From: Dan Swanson ([email protected])
Date: Tue Jul 18 2000 - 06:40:46 PDT

That is well and good, but the problem is that you CANNOT (easily) separate
individual interactions in terms of R, L, and C parasitics. The only method
I know of is to find a lumped-element equivalent circuit (which may not be
unique) and use a microwave circuit simulator (like Touchstone, Libra, ADS,
MDS, Ensemble, SuperCompact, APLAC, etc.) to optimize the R, L, and C,
values to make the equivalent circuit have the same S-parameters as the
original 3D structure. This is a painful process and at best not accurate
and reliable. This is because, at high frequencies, all the parasitics are
distributed and therefore cannot (easily) have an accurate lumped-element
equivalent. Am I too much of a pessimist here? Any ideas of what works best?



Another option is to design the transition on the field-solver (like HFSS) then
use it on the board and forget about L's and C's. There is still a fair amount
of work to do because the solution changes as you change the path. Solution
for layer 1 to layer 3 is generally different than the solution for layer 2 to layer 7.


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