The major IBIS ver. 3.0 enhancements include:
1. Enhanced package model -- the ability to describe the package leads
as uncoupled transmission lines and not just lumped L/R/C
2. The ability to explicitly describe an output that contains multiple output
transistors with staggered turn-on/turn-off
3. The inclusion of data that allows for modeling of diode transit time
effects.
4. The selection of alternate drivers on a signal
5. A new Electrical Board Description (.ebd file) that allows one to
describe a
SIMM or chip-on-board type module as one component.
In brief, if your modeling SIMM modules, want better package models, or have a
complex output that cannot be satisfactorily modeled using the existing V/T
curves
then including ver 3.0 data in your IBIS model may be required. I hope this
helps.
Best Regards,
Stephen Peters
Intel Corp.