From: Tom Zimmerman ([email protected])
Date: Fri May 25 2001 - 08:19:46 PDT
----- Original Message -----
From: "D. C. Sessions" <[email protected]>
To: <[email protected]>
Sent: Friday, May 25, 2001 9:48 AM
Subject: Re: [SI-LIST] : On chip decoupling
> Far and away the most effective capacitance is gate oxide capacitors.
> else has too much ESR to be useful. Long-channel P and N devices (not too
> long or the ESR bug bites) both work fine; just tie the P gate to Vss and
> and drain to Vdd (and vice versa for N). You do need good supply ESD
> but anything between the gates and the rails ruins the high-frequency
I'm not sure what you mean by "between the gates and the rails." Which
gates? Could you clarify?
Also, how do you limit the Q to avoid ringing on the supply? Does the
inherent resistance of the long channel device accomplish this?
Thanks much for your comments!
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