Die Spannungs- und Stromangaben sind als Betrag aufzufassen. Vorzeichen müssen entsprechend Betriebsart und Polarität des Halbleitermaterials gesetzt werden.

Voltage and current ratings are given as magnitude, where the sign has to be set according to operating condition and polarity of the semiconductor material.

UCBO, UCES, UCEX, UCER, UCEO = 500 ... 1000 V
		Rate	ICBO @UCB			Rate	U(BR) CBO	@Ic		U(BR) CEO	@Ic		U(BR) EBO	@IE		@Tc	Ref *?
			mA	V			V	mA		V	mA		V	mA		°C
BDY43		MAX	0.2	480		MIN	600	1.0		300	200		7.0	2.0		25	Tfk75
		MAX	2.0	480		MIN	-	-		-	-		-	-		150
BDY44		MAX	0.2	600		MIN	750	1.0		350	200		7.0	2.0		25	Tfk75
		MAX	2.0	600		MIN	-	-		-	-		-	-		150
		Rate	ICBO @UCB			Rate	U(BR) CBO	@Ic		U(BR) CEO	@Ic		U(BR) EBO	@IE		@Tc	15748
			mA	V			V	mA		V	mA		V	mA		°C
		Rate	ICES @UCE			Rate	U(BR) CBO	@Ic		U(BR) CEO	@Ic		U(BR) EBO	@IE		@TA	Ref *?
			mA	V			V	mA		V	mA		V	mA		°C
SU160		MAX	1.0	1500		MIN				700	100		5.0	10		25	Rft84 Bei89
		Rate	ICES @UCE			Rate	U(BR) CBO	@Ic		U(BR) CEO	@Ic		U(BR) EBO	@IE		@TA	16736
			mA	V			V	mA		V	mA		V	mA		°C

		Rate	ICEO @UCE		IEBO @UEB			Rate	U(BR) CER	@Ic	RBE		U(BR) CEO	@Ic		@Tc	Ref *?
			mA	V	mA	V			V	mA	OHM		V	mA		°C
2N6306		MAX	0.5	250	1.0	8.0		MIN	350	100	50		250	100		25	Rca81
RCS579		MAX	0.5	250	2.0	6.0		MIN	400	100	50		250	100		25	Rca81
2N6307		MAX	0.5	300	1.0	8.0		MIN	400	100	50		300	100		25	Rca81
2N6308		MAX	0.5	350	1.0	8.0		MIN	450	100	50		350	100		25	Rca81
		Rate	ICEO @UCE		IEBO @UEB			Rate	U(BR) CER	@Ic	RBE		U(BR) CEO	@Ic		@Tc	15762
			mA	V	mA	V			V	mA	OHM		V	mA		°C

		Rate	ICEV @UCE		UBE (OFF)		Rate	U(BR) EBO	@IE		E (SB)	@Ic	UBE (OFF)	RBB	Lc		@Tc	Ref *?
			mA	V	V			V	mA		mJ	A	V	kOHM	mH		°C
2N6306		MAX	0.5	500	1.5		MIN				180	3.0	1.5	3.0	40		25	Rca81
		MAX	2.5	450	1.5		MIN										150
RCS579		MAX	0.5	500	1.5		MIN	6.0	1.0		180	3.0	1.5	3.0	40		25	Rca81
		MAX	2.5	450	1.5		MIN										150
2N6307		MAX	0.5	600	1.5		MIN				180	3.0	1.5	3.0	40		25	Rca81
		MAX	2.5	550	1.5		MIN										150
2N6308		MAX	0.5	700	1.5		MIN				180	3.0	1.5	3.0	40		25	Rca81
		MAX	2.5	650	1.5		MIN										150
		Rate	ICEV @UCE		UBE (OFF)		Rate	U(BR) EBO	@IE		E (SB)	@Ic	UBE (OFF)	RBB	Lc		@Tc	15759
			mA	V	V			V	mA		mJ	A	V	kOHM	mH		°C

		Rate	ICES @UCE			ICER @UCE		RBE		IEBO @UEB			Rate	U(BR) CEO	@Ic		@Tc	Ref *?
			mA	V		mA	V	OHM		mA	V			V	mA		°C
BD232		MAX	0.1	500									MIN	300	10		25	Mot85
BUX46		MAX	0.1	850		0.3	850	10		1.0	7.0		MIN	400	100		25	Sga82
		MAX	1.0	850		2.0	850	10					MIN				125
BUX47		MAX	0.15	850		0.4	850	10		1.0	7.0		MIN	400	100		25	Sga82
		MAX	1.5	850		3.0	850	10					MIN				125
BUX48		MAX	0.2	850		0.5	850	10		1.0	5.0		MIN	400	200		25	Sga82
		MAX	2.0	850		4.0	850	10					MIN				125
BUX48A		MAX	0.2	1000		0.5	1000	10		1.0	5.0		MIN	450	200		25	Sga82
		MAX	2.0	1000		4.0	1000	10					MIN				125
BUX48B		MAX	0.5	1000		0.5	1000	10		1.0	5.0		MIN	600	100		25	Sga82
		MAX	3.0	1000		4.0	1000	10					MIN				125
BUX48C		MAX	0.5	1000		0.5	1000	10		1.0	5.0		MIN	700	100		25	Sga82
		MAX	3.0	1000		4.0	1000	10					MIN				125
		Rate	ICES @UCE			ICER @UCE		RBE		IEBO @UEB			Rate	U(BR) CEO	@Ic		@Tc	15733
			mA	V		mA	V	OHM		mA	V			V	mA		°C

		Rate	ICEO @UCE			Rate	U(BR) CER	@Ic	RBE	Lc	UCL		@Tc	Ref *?
			mA	V			V	A	OHM	mH	V		°C
BUX48B		MAX	1.0	600		MIN	1000	0.5	10	2.0	1000		25	Sga82
BUX48C		MAX	1.0	700		MIN	1000	0.5	10	2.0	1000		25	Sga82
		Rate	ICEO @UCE			Rate	U(BR) CER	@Ic	RBE	Lc	UCL		@Tc	15733
			mA	V			V	A	OHM	mH	V		°C

		Rate	ICEO	@UCE	TJ		Rate	UCEO (SUS)	@IC	LC	TJ		Ref *?
			mA	V	°C			V	A	mH	°C
BD232		MAX	0.1	500	25		MIN	300	0.1	25	25		Phi73
		MAX	1.0	500	125
		Rate	ICEO	@UCE	TJ		Rate	UCEO (SUS)	@IC	LC	TJ		17835
			mA	V	°C			V	A	mH	°C