**From:** Muranyi, Arpad (*arpad.muranyi@intel.com*)

**Date:** Mon Sep 18 2000 - 10:35:46 PDT

**Next message:**abe riazi: "RE: [SI-LIST] : Macromodel Creation"**Previous message:**Mayer, Mike: "RE: [SI-LIST] : A interesting question"**Maybe in reply to:**abe riazi: "[SI-LIST] : Macromodel Creation"**Next in thread:**abe riazi: "RE: [SI-LIST] : Macromodel Creation"

Abe,

I would like to comment on the three bullets you listed which put accuracy

and speed into an inverse relationship regarding transistor level and

behavioral models. Simply said this general relationship is NOT TRUE.

You CAN model devices to even a higher level of accuracy behaviorally

than on a transistor (SPICE) level if you like. It all depends on what

parameters you use and what goes into the behavioral model. And this

increased accuracy does not mean that your model will automatically get

slower.

Take a transistor, for example. You can describe it with its geometry,

and properties of the materials that it is made from. A SPICE tool then

converts all that information to electrical characteristics. This takes

a lot of equations and calculations. On the other hand, you can describe

the same transistor's characteristics by providing its node voltage and

current relationships directly (with tables, equations, transfer functions,

etc...) which CAN reduce the number of calculations SPICE has to do, making

it faster.

Now think about the underlying model equations SPICE uses when you do it

the conventional SPICE way. You can have a LEVEL=3 or BSIM4 set of

equations. Which one is more accurate? Most likely the BSIM4, since

it is more recent. However, if your behavioral transistor model DOES

describe something that even BSIM4 cannot, you behavioral model will be

even more accurate. Yet this does not mean that it has to become

automatically slower.

What I wanted to illustrate here is that the accuracy of the model depends

on what goes into it. It's speed, however, depends on how the device is

described. These two are not as strongly related as your three points

suggest.

Arpad Muranyi

Intel Corporation

============================================================================

-----Original Message-----

From: abe riazi [mailto:ariazi@serverworks.com]

Sent: Friday, September 15, 2000 7:17 PM

To: 'si-list@silab.eng.sun.com'

Subject: [SI-LIST] : Macromodel Creation

Dear Scholars:

While visiting a Barnes & Noble bookstore in San Jose, I purchased a copy of

the "Spice Practical Device Modeling" , by Ron Kielkowski.

What especially appealed to me about this publication was its high emphasis

on model creation. In this book SPICE models are classified according to a

hierarchy which includes:

1. Transistor-level models ( provide highest accuracy, though most time

consuming to simulate).

2. Macromodels.

3. Behavioral Macromodels (fastest to simulate, but least accurate)

Most attention is devoted to Macromodels, because they offer a practical

level of accuracy (less than 5% rms error over operating range) and can be

created in a reasonable amount of time (less than eight hours).

The procedure recommended by Ron Kielkowski for construction of macromodels

consists of the following steps:

i. Review the datasheet to obtain as much information related to model

creation as possible (although, frequently majority of the information given

in the datasheet has little value towards model generation).

ii. Utilize bench-top measurement equipment to produce I-V, C-V and Z-F

curves.

iii. From above data extract the desired model parameters.

For a resistor, the Macromodel elements consist of a nominal resistance

Rnom and a parallel capacitance Cp; for an inductor, Lnom (nominal

inductance), Rs (coil resistance) and Cp (winding capacitance); and for a

capacitor, Cnom (an ideal capacitor), RL (leakage resistor), Ls (series

inductor) and ESR (electrical series resistance). These macromodels are

illustrated by Figure 1 (attached gif picture).

In this publication (reference 1), the significance of impedance vs.

frequency plots is emphasized, because:

a. Regarding macromodel of a resistor, the |Z| vs. F graphs aid to

ascertain Cp.

b. For inductor Macromodels, they allow determination of the series

resistance frequency (Frs) and self resonating frequency (Fsrf) from which

values of Lnom and Cp can be calculated via simple formulas.

c. Considering capacitor macromodel, several parameters can be extracted

from the impedance vs. frequency curves, such as ESR (RS) , lead inductance

Ls (calculating Ls involves Fsrf which can be obtained from graph) and Cnom

(the nominal capacitance can be also measured by means of a low frequency

capacitance meter).

ESR and |Z| vs. F plots have been explained previously in this forum in

relation to PCB power distribution systems, decoupling and bypass

capacitors. They are also included here due to their significance towards

macromodel generation.

Figure 2 presents two examples of impedance vs. frequency graphs. Such plots

can be created in a number of different ways; here, Microsoft Excel was

employed. In each case the raw data consisted of three columns: current ( I

) , Voltage drop ( V ) and frequency ( F ). The Excel program calculated

another data column (impedance Z = V/I ), and produced the logarithmic

impedance plots. Clearly, ESR strongly influences the shape of |Z| vs. F

curves.

Macromodels can be incorporated into SPICE simulation files as subcircuits;

demonstrated by the example below:

Example 1. Encapsulation of a capacitor macormodel CMACRO, having

parameters Cnom, RL, Ls and Rs (ESR).

In the circuit input file example.cir:

X_MACRO 2 0 CMACRO

.INCLUDE EXAMPLE.MOD

In the model file example.mod:

.SUBCKT CMACRO 10 20

Cnom 10 30 1000uF

Rs 30 40 0.15ohms

Ls 40 20 5nH

RL 10 30 10meg

.ENDS CMACRO

Use of macromodels instead of SPICE primitive models can significantly

enhance the accuracy of a high frequency simulation and yield results in

excellent agreement with physical measurements.

Simulation of certain cases (such as high power circuits) require taking

into consideration effects due to temperature variations. Temperature

dependent macromodels can be readily constructed (reference 1).

To summarize, Macromodels assume an intermediate position in the hierarchy

of SPICE models in the sense that they are below the transistor-level models

in accuracy and rank second to behavioral models in simulation speed. They

are in demand by being practical; i.e., can be created in a reasonable

amount of time with an error margin tolerable in many applications.

Impedance vs. frequency plots play a critical role in creation of

macromodels of passive components. These models can be inserted into SPICE

input files as subcircuits. Simulations utilizing macromodels yield superior

results than using ideal SPICE primitives, particularly in the high

frequency domain.

Reference 1. R. M. Kielkowski, "SPICE Practical Device Modeling",

McGraw-Hill, Inc. 1995.

Thanks for your comments and with best regards,

Abe Riazi

ServerWorks

2251 Lawson Lane

Santa Clara, CA 95054

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