From: Weston Beal (firstname.lastname@example.org)
Date: Tue Mar 21 2000 - 12:19:57 PST
Dear IC experts,
I've been working a problem that might involve the C_comp parameter in an
IBIS file. In discussion with others, I find some difference of opinion.
the IBIS spec says that C_comp represents the capacitance on the die. I
understand this to be the bond pad, clamp diode reverse bias capacitance,
and final stage transistor channel capacitance. What other effects are
important contributors to C_comp? I suspect that the bond pad is the
dominant factor in todays technology. Is that correct? What are typical
values for the components I've listed?
I appreciate your insight on this matter.
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