As I know for a CMOS device, during output transition, both PMOS and
NMOS will turn on in a short period of time. I wonder if an IBIS model
describes this behavior. If yes then how it does. Will the behavior
affect the accuracy of simulation with IBIS model?
Based on what I know the V-I curve for PULL UP or DOWN is obtained by
turning one MOS off and then swift the V-fixture to get Current reading.
It seems to me that the V_I curve doesn't contain the information to
describe the transition, both PMOS and NMOS turned on.
CAE Engineer of EDA Department
Digital Equipment Corp. Taiwan Branch
Email: Linjohn@mail.dec.com <mailto:Linjohn@mail.dec.com>
TEL: 1-886-3-3900000 ext. 2152