The current equation is IDS = k' w/l((Vgs-Vt)**2)*(1+lambda)*Vds in saturation.
The linear region of operation is a little simpler and is the final region of operation when an n-channel device has pulled a node fully to a low.
Mike Degerstrom wrote:
> Jim,
>
> Thanks for your reply. I'm no device physicist but I don't
> think Idsat should be a function of voltage. Certainly voltage
> variation affects a CMOS buffer drive strength. However
> I was asking for Idsat for the following equation relating drain current
> to the gate-to-source voltage for a CMOS device in the ohmic region:
>
> ID=IDsat(VGS-VT)^2
>
> Also, I haven't been able to find the relationship between Idsat
> and temperature in my text books.
>
> BTW, for anyone else that wants to contribute - please don't
> supply PROPRIETARY information that you have from foundrys that
> you work with.
>
> Mike
>
> > HI Mike,
> >
> > You can expect a 4:1 variation over Process,voltage, and temperature for
> 3 sigma process models.
> >
> > Jim Freeman
> >
> >
> > Mike Degerstrom wrote:
> >
> > > Can anyone tell me what reasonable Idsat variations one could
> > > expect from a typical CMOS line? Could you please qualify your
> > > answers such as "these are +/- 3 sigma numbers" if at all possible?
> > >
> > > Mike
>
> --
> _______________________________________________________________
> Mike Degerstrom Email: degerstrom.michael@mayo.edu
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