Gate oxide punch-through is one of the important reliability considerations.
Whenever there are memory devices, I also worry about the fact that big
overshoots into clamp structures, can cause die currents in the wrong places
... which among other things stands the chance of upsetting memory states
(RAM bits flip, programmable devices un- or re-program themselves, etc.).
Local device heating might cause electrical parameters to go astray, but
that's just a stab in the dark.
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