Re: [SI-LIST] : How board over-shoot under-shoot influence a

Chuck Hill ([email protected])
Tue, 23 Mar 1999 18:16:12 -0700

Greg,

The hot carrier injection has a number of articles in the reliability area.
The hot carrriers formed by the high E field create lattice defects in the
MOS channel. This is a permanent and cumulative effect.

The high E field on the MOS gate capacitance can cause impurities to
migrate into the dielectric effectively changing the threshold voltage.
Again, permanent and cumulative.

Apparently this has been investigated in the context of DRAMs with the push
to higher densities.

Charles Hill, consultant
Alta Engineering
[email protected]

At 08:24 AM 3/22/99 -0600, [email protected] wrote:
>Yehuda,
>
>Turning on gnd clamps has been known to have an adverse affect on the
>super-sensitive analog circuitry in a PLL. The theory is that charge gets
>dumped into the substrate during an undershoot event, creating noise that
>finds its way into the PLL through the substrate. I've never investigated
>this effect myself - just heard about it. I'm sure this is highly
>dependent on how well isolated the PLL is.
>
>I also know that DRAM vendors are concerned about this kind of thing. They
>use a charge pump to artificially lower the substrate voltage and typically
>do not use gnd clamps.
>
>The threshold shift theory is certainly interesting. The tough part would
>be translating an overshoot current, which you can predict, into a
>substrate voltage shift, which is what you're after. Of course, the
>trouble with all of this is that it's so hard to prove because it's so hard
>to model...
>
>Greg Edlund
>Advisory Engineer, Critical Net Analysis
>IBM
>3650 Hwy. 52 N, Dept. HDC
>Rochester, MN 55901
>[email protected]
>
>
>---------------------- Forwarded by Gregory R Edlund/Rochester/IBM on
>03/22/99 08:12 AM ---------------------------
>
>
>"Yehuda D. Yizraeli" <[email protected]> on 03/22/99 03:52:44 AM
>
>Please respond to [email protected]
>
>To: [email protected] (Chuck Hill)
>cc: [email protected], [email protected] (bcc: Gregory R
> Edlund/Rochester/IBM)
>Subject: Re: [SI-LIST] : How board over-shoot under-shoot influence a
>
>
>
>
>
>Charles, John.
>
>
>
> Its interesting point to learn about, however the failures i am
>relating to are
>short term, namely not related to reliability which make parameters
>different or so. According
>to the current consumption, no latchup occour so it seems like changing the
>reference
>of the input buffers or so and i can not understand how a glitch can do so
>(theoreticaly
>it might happen, but with all chip self capacitance etc...?)
>
>anyway, thanks!!
>
> yehuda
>
>
>
>
>>
>> Yehuda,
>>
>> There are six distinct effects I can think of:
>> 1. Excessive can cause latchup in CMOS (although not likely since
>latchup
>> is usually controlled).
>> 2. When there is no clamp diode to the supply rail, high E fields can
>> create "hot carriers" in MOS devices which slowly degrade the device by
>> permanently shifting the thresholds.
>> 3. When there is a clamp diode to the substrate, if enough current is
>> injected, the device becomes non-functional in the region around the
>> substrate junction nearest the pad since it is forward biased. This
>occurs
>> for a period of time, and then the device regains functionality.
>> 4. High E fields on MOS gates can cause migration of impurities in
>poorly
>> manufactured devices which leads to permanent threshold changes
>(shouldn't
>> happen in today's devices).
>> 5. High ringing means lots of reflections that persist over time.
>These
>> reflections can affect subsequent switching and the exact timing of the
>edges.
>> 6. Of course if the MOS gate, or PN junction is avalanched, then
>> destruction can occur from excessive local heating.
>>
>> The high voltage of the spike occurs at very low current since the inputs
>> are mostly capacitive.
>>
>> Charles Hill, consultant
>> Alta Engineering
>> [email protected]
>>
>>
>> At 12:00 PM 3/21/99 +0200, Yehuda D. Yizraeli wrote:
>> >Hello SI experts,
>> >
>> >
>> > Its good design practice to have a non reflective board design,
>however i
>> >would like to understand the nature of the failure caused by the
>reflections.
>> >
>> > One failure mechanism is double triggering, but assuming the
>reflections
>> acuse
>> >an overvoltage (over the power supply value, or under ground value) BUT
>> not ringing through
>> >thetriggering point, how can a chip be affected by this ringing....?
>Does
>> it make the input
>> >buffer levels lower (hey hey hey, its spikes, short term influence,
>> doesn't it???).
>> >
>> >
>> >
>> > Any help, article and/or any pointer is appreciated.!!
>> >
>> >
>> >
>> >
>> >
>> >
>> > regards, yehuda
>> >
>> >
>> >
>> >
>> >
>> >
>> >--
>> >-------------------------------------------------------------------
>> > Yehuda D. Yizraeli
>> >
>> > Zoran Microelectronics Ltd. E-mail: [email protected]
>> > Advanced Technology Center Direct Tel: 972-4-85-45-795
>> > P.O.B. 2495, Haifa 31204, Israel Operator : 972-4-85-45-777
>> > http://www.zoran.com Fax : 972-4-8-551-550
>> >-------------------------------------------------------------------
>> >
>> > In god we trust, all the rest should use data
>> >
>>
>>^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^
>> >
>> >The trouble with doing something right the first time is that
>> >
>> > nobody appreciates how difficult it was.
>> >
>>
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>--
>-------------------------------------------------------------------
> Yehuda D. Yizraeli
>
> Zoran Microelectronics Ltd. E-mail: [email protected]
> Advanced Technology Center Direct Tel: 972-4-85-45-795
> P.O.B. 2495, Haifa 31204, Israel Operator : 972-4-85-45-777
> http://www.zoran.com Fax : 972-4-8-551-550
>-------------------------------------------------------------------
>
> In god we trust, all the rest should use data
>
>^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^
>
>The trouble with doing something right the first time is that
>
> nobody appreciates how difficult it was.
>
>^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^
>
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