From: ARiazi ([email protected])
Date: Sat Mar 31 2001 - 11:37:26 PST
Dear All:
In my recent post, the third paragraph includes:
"IBIS specs [Reference 1] require for the [POWER Clamp] data to be Vcc
relative, as illustrated by Figure 3 which is a plot of current through D2
versus Vcc-Vx. A comparison of Figures 2 and 3 reveals a shift of I(D2) from
the first to the second Cartesian quadrant."
D2 should have been D1.
Also the I-V table of XTK diode example includes typographical error. The
POINTS should be replaced by POINT as corrected below:
#Schottky diode to 5.0 Volts
LOADSPEC FAST_SCHOTTKY5
CEFF: 0
V-I: 5 POINTS
# Voltage given in Volts, Current in mA
POINT V: 0 I: 0
POINT V: 5.0 I: 0.0
POINT V: 5.5 I: 3.0
POINT V: 5.6 I: 5.0
POINT V: 5.75 I: 30.0
#End of Model
Best Regards,
Abe
----- Original Message -----
From: abe riazi <[email protected]>
To: <[email protected]>
Sent: Friday, March 30, 2001 7:35 PM
Subject: [SI-LIST] : Diode Modeling
Dear Scholars:
The diode's PN junction and the base-emitter (or base-collector) junctions
of bipolar transistors are governed by similar physical laws. Subsequently,
diode model having numerous applications is regarded as fundamental to
models of other semiconductor devices. Several stages of creating IBIS,
SPICE and XTK diode models are described by this message.
IBIS model of a diode can be generated via simulation or measurements.
Figure 1 is schematic for generating behavioral model of 1N4002 rectifier
diode by way of simulation. Using PSPICE program, DC sweep was carried out
from -15 to +15V to cover the (-Vcc to 2Vcc) voltage range recommended by
IBIS specs.
Figure 2 presents simulation results for diode currents I(D1) and I(D2) as
function of applied voltage. When generating I-V (or V-T) curves for an
IBIS datasheet, higher accuracy is achievable by sampling more data points
in the non-linear regions (such as knee areas ) of the curve as opposed to
more linear sections . IBIS specs [Reference 1] require for the [POWER
Clamp] data to be Vcc relative, as illustrated by Figure 3 which is a plot
of current through D2 versus Vcc-Vx. A comparison of Figures 2 and 3 reveals
a shift of I(D2) from the first to the second Cartesian quadrant.
A diode IBIS model can be produced by extracting the [POWER Clamp] table
from I(D1) vs. (Vcc-Vx) of Figure 3, the [GND Clamp] data from I(D2) Vs. Vx
of Figure 2, incorporating package/pin parasitic values, and inserting the
necessary keywords [Reference 1] such as [IBIS Ver], [File Name], [File
Rev], [Component], [Manufacturer], etc.
Regarding procedure for creating SPICE diode macromodels, the major steps
[Reference 2] include: (i) Inspecting device data sheet for useable
modeling information. (such as, plots of forward diode current vs. voltage,
junction capacitance vs. diode voltage, etc.), (ii) conducting I-V and C-V
measurements to extract remaining parameter values, and (iii) performing
simulations to optimize model parameters.
The SPICE diode macromodel can contain fourteen parameters: IS (Reverse
leakage current), RS (Diode series resistance), N (Emission coefficient), BV
(diode breakdown voltage), IBV (Diode breakdown current), CJO (Zero-bias
junction capacitance), VJ (Bulk junction potential), FC (Coefficient for
capacitance), M (Grading coefficient), TT (transit time), EG (Energy
band-gap), XTI (Temperature coefficient), KF (Flicker-noise coefficient),
and AF (Flicker-noise exponent)). Each of above parameters has a default
value assigned by SPICE program; however, it is frequently possible (based
on application) to produce a sufficiently accurate diode model using just a
subset of the 14 parameters. For instance, parameters KF, AF, EG and XT1 are
needed only for AC noise analyses and temperature sweeps; hence, unnecessary
if the diode model is intended for other types of simulations. As another
example, SPICE model of a 1N4002 diode suitable for numerous applications
[Reference 2] includes:
IS = 46.5Pa, RS=123MohmS, N=1.35, CJO=51.5pF, M=0.333, VJ=0.381, FC=0.5,
TT=5.77uS.
(with remaining parameters at default values).
It should be added that SPICE model parameters are scalar variables of diode
equation:
Id = IS * [exp(qVd/Nkt) - 1]
Where Id is diode DC current, q is electron charge, Vd is voltage across
diode, K is Boltzmann's constant, and t is the diode temperature in degrees
Kelvin ( IS and N as defined earlier).
Different forms of above equation exist (some being approximations) for
describing three regions of diode operation namely: forward conduction,
reverse conduction before breakdown, and reverse-bias breakdown .
SPICE or IBIS models can not be directly utilized by some simulators. For
instance, XTK requires that models be in Quad format. A Quad diode model
can be created from the IBIS version using IBIS2XTK, or written manually.
A sample is presented:
#Schottky diode to 5.0 Volts
LOADSPEC FAST_SCHOTTKY5
CEFF: 0
V-I: 5 POINTS
# Voltage given in Volts, Current in mA
POINTS V: 0 I:0
POINTS V: 5.0 I:0.0
POINTS V: 5.5 I:3.0
POINTS V: 5.6 I: 5.0
POINTS V: 5.75 I: 30.0
#End of Model
The above discussed models have contained data limited to only one
simulation corner, whereas a more complete model demands data for three
(i.e. MIN, TYP and MAX) corners. Simulations results based on TYP models
are often well suited for purpose of correlation with physical measured
data. However, Fast and Slow corner runs are also frequently necessary to
verify a design under all conditions.
A finished model also needs a package/pin parasitic section. Nevertheless,
a model may lack parasitic portion mainly due to two reasons: (1) the model
developer leaves it to the user to ascertain what package type and parasitic
values are applicable, and (2) The model is intended for use at low
frequencies where parasitics have negligible effects.
In conclusion, several phases of generating IBIS and SPICE diode models were
explained. A XTK model was also exemplified to emphasize that some
simulators do not directly employ IBIS or SPICE models and demand
translation to simulator's native model format. One logical order for diode
modeling consists of first creating SPICE diode via measurements, then IBIS
model by means of simulation and finally the Quad version using IBIS2XTK.
REFERNCES:
1. IBIS (I/O Buffer Information Specification) Version 3.2, August 1999.
2. R. Kielkowski, "SPICE Practical Device Modeling", McGraw-Hill, Inc. 1995.
Your response is highly appreciated.
Respectfully,
Abe Riazi
ServerWorks
2251 Lawson Lane
Santa Clara, CA 95054
**** To unsubscribe from si-list or si-list-digest: send e-mail to
[email protected]. In the BODY of message put: UNSUBSCRIBE
si-list or UNSUBSCRIBE si-list-digest, for more help, put HELP.
si-list archives are accessible at http://www.qsl.net/wb6tpu
****
This archive was generated by hypermail 2b29 : Thu Jun 21 2001 - 10:11:23 PDT