MRF150 50 V, 150 MHz 150 W N–Channel Linear RF Power MOSFET	211-11/2 Case Outline
	The MRF150 RF Power Field–Effect Transistor, N–Channel Enhancement–Mode, is designed primarily for linear large–signal output stages up to 150 MHz frequency range. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) Superior High Order IMD IMD(d3) (150 W PEP) —  –32 dB (Typ) IMD(d11) (150 W PEP) —  –60 dB (Typ) 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR

	Data Sheet   (149 K)
	S–Parameters

	EB104/D	Get 600 Watts RF from Four Power FETs  (Available from Mfax only)

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